BC818-40LT1G

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BC818-40LT1G - Onsemi
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Краткое описание: NPN BJT, 25V VCEO, 500mA IC, 100MHz, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a collector-emitter voltage (VCEO) of 25V, maximum collector current of 500mA, and a transition frequency of 100MHz. Offers a minimum DC current gain (hFE) of 250 and a maximum power dissipation of 300mW. Operates across a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
RoHS Compliant
Width 1.4mm
Height 1.11mm
Length 3.04mm
hFE Min 250
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-23-3
Max Frequency 100MHz
RoHS Compliant Yes
Contact Plating Tin, Matte
Package Quantity 1
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 25V
Max Collector Current 500mA
Max Power Dissipation 225mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 30V
Collector-emitter Voltage-Max 700mV
Collector Emitter Voltage (VCEO) 25V
Collector Emitter Breakdown Voltage 25V
Collector Emitter Saturation Voltage 700mV

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