BC846AW-7-F
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NPN BJT Transistor, 65V V(BR)CEO, 100mA I(C), 300MHz fT, SOT-323
Дополнительная информация
NPN silicon bipolar junction transistor for general-purpose applications. Features a 65V collector-emitter breakdown voltage and 100mA continuous collector current. Offers a 300MHz transition frequency and a minimum hFE of 110. Packaged in a compact SOT-323 surface-mount plastic package, this component is lead-free and RoHS compliant.
| RoHS | Compliant |
| Type | General Purpose |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| hFE Min | 110 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-323 |
| Max Frequency | 100MHz |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 6V |
| Continuous Collector Current | 100mA |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | 200mV |
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