BC846B-7

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BC846B-7 - Diodes
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Краткое описание: NPN BJT Transistor, 65V VCEO, 300MHz, 100mA IC, SOT-23
Производитель Diodes
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN Silicon Bipolar Junction Transistor for general-purpose amplification and switching. Features a 65V Collector-Emitter Voltage (VCEO) and 80V Collector-Base Voltage (VCBO). Offers a maximum collector current of 100mA and a gain bandwidth product of 300MHz. Housed in a compact SOT-23 surface-mount plastic package with a 300mW power dissipation. Operates across a wide temperature range from -65°C to 150°C.
RoHS Not Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Series BC846B
Weight 0.000282oz
hFE Min 200
Polarity NPN
Frequency 300MHz
Packaging Tape and Reel
Package/Case SOT-23
RoHS Compliant No
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 1
Max Collector Current 100mA
Max Power Dissipation 300mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 80V
Collector-emitter Voltage-Max 65V
Collector Emitter Voltage (VCEO) 65V

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