BC846B-7-F

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BC846B-7-F - Diodes
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Краткое описание: NPN BJT Transistor, 65V VCEO, 100mA IC, 300MHz, SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN silicon bipolar junction transistor for general-purpose amplification and switching. Features a 65V collector-emitter breakdown voltage and 100mA maximum collector current. Operates with a 300MHz transition frequency and a minimum hFE of 200. Packaged in a 3-pin SOT-23 surface-mount plastic package, this RoHS compliant component offers a wide operating temperature range from -65°C to 150°C.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Weight 0.000282oz
hFE Min 200
Polarity NPN
Frequency 300MHz
Lead Free Lead Free
Packaging Tape and Reel
Termination SMD/SMT
Package/Case SOT-23
Max Frequency 300MHz
Current Rating 100mA
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage 65V
Package Quantity 3000
Power Dissipation 350mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 300MHz
Max Breakdown Voltage 65V
Max Collector Current 100mA
Max Power Dissipation 300mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 80V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 65V
Collector Emitter Breakdown Voltage 65V
Collector Emitter Saturation Voltage 600mV

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