BC846BLP4-7B

Производится
BC846BLP4-7B - Diodes
Увеличить
Краткое описание: NPN BJT 65V 0.1A 1000mW X2-DFN SMT Transistor
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor for surface mount applications. Features a 3-pin X2-DFN package with no leads, measuring 0.6mm x 1mm x 0.35mm. Offers a maximum collector-emitter voltage of 65V, 0.1A DC collector current, and 1000mW power dissipation. Achieves a minimum DC current gain of 200 at 2mA/5V and a typical transition frequency of 300MHz. Operates across a temperature range of -55°C to 150°C.
PCB 3
ECCN EAR99
PPAP No
Type NPN
EU RoHS Yes
Category Bipolar Power
HTS Code 8541290075
Mounting Surface Mount
Cage Code 6M0U4
Pin Count 3
Automotive No
Lead Shape No Lead
Schedule B 8541290080
Package/Case X2-DFN
AEC Qualified No
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Package Material Plastic
Basic Package Type Non-Lead-Frame SMT
Package Width (mm) 1
Package Description Dual Flat Package No Lead
Package Family Name DFN
Package Height (mm) 0.35(Max)
Package Length (mm) 0.6
Minimum DC Current Gain 200@2mA@5V
Seated Plane Height (mm) 0.4(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 1000mW
Min Operating Temperature -55°C
Number of Elements per Chip 1
Maximum DC Collector Current 0.1A
Maximum Emitter Base Voltage 6V
Maximum Transition Frequency 300(Typ)MHz
Maximum Collector Base Voltage 80V
Maximum Collector-Emitter Voltage 65V

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.