BC846BLT3G
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NPN BJT Transistor, 65V VCEO, 100mA IC, 100MHz, SOT-23
Дополнительная информация
NPN Bipolar Junction Transistor in a SOT-23-3 package. Features a 65V collector-emitter voltage (VCEO) and 80V collector-base voltage (VCBO). Offers a maximum collector current of 100mA and a power dissipation of 300mW. Operates with a minimum gain (hFE) of 200 and a transition frequency of 100MHz. Packaged on a 10000-piece tape and reel, this component is RoHS compliant and halogen-free.
| RoHS | Compliant |
| Width | 0.055inch |
| Height | 0.037inch |
| Length | 0.119inch |
| hFE Min | 200 |
| Polarity | NPN |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Package/Case | SOT-23-3 |
| Max Frequency | 100MHz |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 65V |
| Package Quantity | 10000 |
| Power Dissipation | 300mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 300mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | 600mV |
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