BC846BPDW1T1G

Производится
BC846BPDW1T1G - Onsemi
Увеличить
Краткое описание: NPN/PNP BJT Transistor, 65V, 100mA, 100MHz, SOT-363-6
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN/PNP Bipolar Junction Transistor (BJT) in a SOT-363-6 package. Features include a 65V Collector-Emitter Voltage (VCEO), 100mA maximum collector current, and a 100MHz transition frequency. This device offers a minimum hFE of 150 and a maximum power dissipation of 380mW. It operates within a temperature range of -55°C to 150°C and is supplied on a 3000-piece tape and reel. RoHS and Halogen Free compliant.
RoHS Compliant
Width 0.053inch
Height 0.039inch
Length 0.086inch
hFE Min 150
Polarity NPN, PNP
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-363-6
Max Frequency 100MHz
Current Rating 100mA
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage 65V
Package Quantity 3000
Power Dissipation 380mW
Number of Elements 2
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 65V
Max Collector Current 100mA
Max Power Dissipation 380mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 80V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 65V
Collector Emitter Breakdown Voltage 65V
Collector Emitter Saturation Voltage 600mV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.