BC846BWT1G
Производится
Увеличить
Краткое описание:
NPN BJT Transistor 65V 100mA 100MHz SC-70
Дополнительная информация
NPN bipolar junction transistor (BJT) in a 3-pin SC-70 package. Features a collector-emitter breakdown voltage of 65V, maximum collector current of 100mA, and a power dissipation of 150mW. Offers a minimum DC current gain (hFE) of 150 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Width | 1.35mm |
| Height | 0.9mm |
| Length | 2.2mm |
| hFE Min | 150 |
| Polarity | NPN |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Package/Case | SC |
| Max Frequency | 100MHz |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 65V |
| Package Quantity | 3000 |
| Power Dissipation | 150mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | 600mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
