BC846T,115

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BC846T,115 - NXP
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Краткое описание: NPN BJT Transistor 65V 100mA 100MHz SOT-416 SM
Производитель NXP
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

NPN bipolar junction transistor (BJT) for surface mount applications. Features a 65V collector-emitter breakdown voltage and a maximum collector current of 100mA. Operates with a transition frequency of 100MHz and a maximum power dissipation of 150mW. Housed in an SC package with tin contact plating, this RoHS compliant component offers a wide operating temperature range from -65°C to 150°C.
RoHS Compliant
Mount Surface Mount
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SC
RoHS Compliant Yes
Contact Plating Tin
Package Quantity 1
Power Dissipation 150mW
Number of Elements 1
Radiation Hardening No
Transition Frequency 100MHz
Max Breakdown Voltage 65V
Max Collector Current 100mA
Max Power Dissipation 150mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 80V
Collector-emitter Voltage-Max 400mV
Collector Emitter Voltage (VCEO) 65V
Collector Emitter Breakdown Voltage 65V

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