BC847ALT1G

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BC847ALT1G - Onsemi(onsemi)
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Краткое описание: NPN BJT, 45V, 100mA, 100MHz, SOT-23
Производитель Onsemi(onsemi)
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a collector-emitter voltage (VCEO) of 45V, maximum collector current of 100mA, and a transition frequency of 100MHz. This component offers a minimum DC current gain (hFE) of 110 and a maximum power dissipation of 300mW. Packaged on a 3000-piece tape and reel, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
RoHS Compliant
Width 1.4mm
Height 1.01mm
Length 3.04mm
hFE Min 110
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-23-3
Max Frequency 100MHz
Current Rating 100mA
RoHS Compliant Yes
DC Rated Voltage 45V
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 300mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 600mV

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