BC847AWT1G

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BC847AWT1G - Onsemi
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Краткое описание: NPN BJT Transistor, 45V VCEO, 100mA IC, 100MHz, SC-70
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor in a compact SC-70 (SOT-323) 3-lead package. Features a 45V Collector-Emitter Voltage (VCEO) and a 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 90 and a transition frequency of 100MHz. Operates across a wide temperature range from -55°C to 150°C, with 150mW maximum power dissipation. This RoHS and Halogen Free component is supplied on a 3000-piece tape and reel.
RoHS Compliant
Width 1.35mm
Height 0.9mm
Length 2.2mm
hFE Min 90
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SC
Max Frequency 100MHz
Current Rating 100mA
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage 45V
Package Quantity 3000
Power Dissipation 150mW
Number of Elements 1
Radiation Hardening No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 150mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 600mV

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