BC847BDW1T1G

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BC847BDW1T1G - Onsemi
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Краткое описание: NPN BJT Transistor 45V 100mA 380mW 100MHz SOT-363-6
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor (BJT) for general-purpose applications. Features a 45V collector-emitter breakdown voltage and a 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 100MHz. Housed in a 6-pin SC-88 (SOT-363-6) surface-mount package with tin, matte plating. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 380mW. This RoHS compliant component is supplied on tape and reel.
RoHS Compliant
Width 1.25mm
Height 0.9mm
Length 2mm
hFE Min 200
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-363-6
Max Frequency 100MHz
Current Rating 100mA
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage 45V
Package Quantity 3000
Power Dissipation 380mW
Number of Elements 2
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 380mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 600mV

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