BC847BDW1T3G

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BC847BDW1T3G - Onsemi
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Краткое описание: Dual NPN BJT Transistor, 45V, 100mA, 100MHz, SOT-363
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual NPN Bipolar Transistor in a SOT-363-6 package. Features a collector-emitter voltage of 45V, collector current of 100mA, and a transition frequency of 100MHz. Offers a minimum hFE of 200 and a maximum power dissipation of 380mW. Operates across a temperature range of -55°C to 150°C. Packaged in a 10000-unit tape and reel. RoHS and Halogen Free compliant.
RoHS Compliant
Width 0.053inch
Height 0.039inch
Length 0.086inch
hFE Min 200
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-363-6
Max Frequency 100MHz
Current Rating 100mA
RoHS Compliant Yes
DC Rated Voltage 45V
Package Quantity 10000
Power Dissipation 380mW
Number of Elements 2
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 380mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 600mV

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