BC847BLT1G

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BC847BLT1G - Onsemi
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Краткое описание: NPN BJT 45V 100mA 300mW SOT-23 General Purpose Transistor
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

General Purpose NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 45V Collector-Emitter Voltage (VCEO) and a 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 100MHz. Dissipates up to 300mW with an operating temperature range of -55°C to 150°C. RoHS and Lead-Free compliant.
RoHS Compliant
Type General Purpose
Width 1.3mm
Height 0.94mm
Length 2.9mm
hFE Min 200
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-23-3
Max Frequency 100MHz
Current Rating 100mA
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage 45V
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 300mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 600mV

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