BC847BM3T5G

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BC847BM3T5G - Onsemi
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Краткое описание: NPN BJT Transistor, 45V, 100mA, 100MHz, SOT-723
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor (BJT) in a SOT-723-3 package. Features a collector-emitter voltage (VCEO) of 45V, maximum collector current of 100mA, and a transition frequency of 100MHz. Offers a maximum power dissipation of 260mW and operates within a temperature range of -55°C to 150°C. Supplied on an 8000-piece tape and reel.
RoHS Compliant
Width 0.85mm
Height 0.55mm
Length 1.25mm
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-723-3
Max Frequency 100MHz
RoHS Compliant Yes
Package Quantity 8000
Power Dissipation 600mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 260mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 600mV

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