BC847BPDW1T1G

Производится
BC847BPDW1T1G - Onsemi
Увеличить
Краткое описание: NPN/PNP BJT, 45V, 100mA, 100MHz, SOT-363-6
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Co-packaged NPN and PNP bipolar junction transistor with a 45V collector-emitter breakdown voltage and 100mA maximum collector current. Features a 100MHz transition frequency and 150 minimum hFE. Housed in a compact SOT-363-6 package with Tin, Matte contact plating, this RoHS and Lead Free component offers a wide operating temperature range from -55°C to 150°C. Ideal for surface mount applications, it is supplied on a 3000-piece tape and reel.
RoHS Compliant
Width 1.25mm
Height 0.9mm
Length 2mm
hFE Min 150
Polarity NPN, PNP
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Termination SMD/SMT
Halogen Free Halogen Free
Package/Case SOT-363-6
Max Frequency 100MHz
Current Rating 1A
Output Voltage 5V
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage 45V
Package Quantity 3000
Power Dissipation 380mW
Number of Elements 2
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 380mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 600mV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.