BC847BPDW1T3G

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BC847BPDW1T3G - Onsemi
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Краткое описание: NPN/PNP BJT, 45V, 100mA, 100MHz, SOT-363
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Co-packaged NPN and PNP bipolar junction transistor (BJT) featuring a 45V collector-emitter breakdown voltage and 100mA maximum collector current. This device offers a 100MHz transition frequency and a minimum hFE of 150. Encased in a compact SOT-363-6 package, it operates within a temperature range of -55°C to 150°C and has a power dissipation of 380mW. The component is RoHS compliant and supplied on a 10000-piece tape and reel.
RoHS Compliant
Width 1.35mm
Height 1mm
Length 2.2mm
hFE Min 150
Polarity NPN, PNP
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-363-6
Max Frequency 100MHz
RoHS Compliant Yes
Contact Plating Tin, Matte
Package Quantity 10000
Power Dissipation 380mW
Number of Elements 2
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 380mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 600mV