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NPN BJT Transistor, 45V VCEO, 100mA IC, 100MHz, SOT-363
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 45V collector-emitter breakdown voltage (VCEO) and a 100mA maximum collector current (IC). Operates with a 100MHz transition frequency and a 400mV collector-emitter saturation voltage. Housed in an ultra-small, 6-lead plastic SOT-363 surface mount package. RoHS compliant with tin, matte contact plating.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| Voltage | 45V |
| Polarity | NPN |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-363 |
| Max Frequency | 100MHz |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 400mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 400mV |
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