BC847BT-7-F
Производится
Увеличить
Краткое описание:
NPN BJT Transistor, 45V, 100mA, 100MHz, SOT-523
Дополнительная информация
NPN silicon bipolar junction transistor designed for small signal amplification. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 150mW. This surface mount device is housed in an ultra-small SOT-523 plastic package, measuring 1.6mm in length, 0.8mm in width, and 0.75mm in height. It offers a gain bandwidth product and transition frequency of 100MHz.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.8mm |
| Height | 0.75mm |
| Length | 1.6mm |
| Weight | 7.1E-05oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-523 |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 50V |
| Package Quantity | 3000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
