BC847BWT1G

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BC847BWT1G - Onsemi
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Краткое описание: NPN BJT Transistor, 45V VCEO, 100mA IC, 100MHz, SC-70
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor in SC-70 (SOT-323) 3-lead package, designed for general-purpose amplification and switching. Features a maximum collector current of 100mA and a collector-emitter voltage (VCEO) of 45V. Offers a minimum DC current gain (hFE) of 150 and a transition frequency of 100MHz. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 150mW. Supplied on a 3000-piece tape and reel.
RoHS Compliant
Width 1.35mm
Height 0.9mm
Length 2.2mm
hFE Min 150
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SC
Max Frequency 100MHz
RoHS Compliant Yes
DC Rated Voltage 45V
Package Quantity 3000
Power Dissipation 150mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 150mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 600mV

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