BC847C-7-F
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Краткое описание:
NPN BJT Transistor, 45V VCEO, 100mA IC, 300MHz, SOT-23, SMD
Дополнительная информация
NPN silicon bipolar junction transistor in a SOT-23 surface mount package. Features a 45V collector-emitter breakdown voltage, 100mA maximum collector current, and a 300MHz transition frequency. Offers a minimum hFE of 420 and a maximum power dissipation of 350mW. Designed for general-purpose amplification and switching applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| hFE Min | 420 |
| Polarity | NPN |
| Frequency | 300MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| Max Frequency | 300MHz |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 45V |
| Package Quantity | 3000 |
| Power Dissipation | 350mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 300mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 600mV |
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