BC847CDW1T1G

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BC847CDW1T1G - Onsemi
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Краткое описание: Dual NPN BJT, 45V, 100mA, 100MHz, SOT-363-6
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual NPN Bipolar Transistor in a compact SOT-363-6 package. Features a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. Offers a high DC current gain (hFE) of 420 and a transition frequency of 100MHz. Operates across a wide temperature range from -55°C to 150°C with a power dissipation of 380mW. This component is RoHS compliant and supplied on a 3000-piece tape and reel.
RoHS Compliant
Width 1.35mm
Height 1.1mm
Length 2.2mm
hFE Min 420
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-363-6
Max Frequency 100MHz
Current Rating 100mA
RoHS Compliant Yes
DC Rated Voltage 45V
Package Quantity 1
Power Dissipation 380mW
Number of Elements 2
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 380mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 600mV

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