BC847CDXV6T1G

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BC847CDXV6T1G - Onsemi
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Краткое описание: NPN BJT Transistor, 45V, 100mA, 100MHz, SOT-563-6
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor in a SOT-563-6 package, featuring a 45V Collector Emitter Voltage (VCEO) and a 100mA maximum collector current. This component offers a minimum DC current gain (hFE) of 420 and a transition frequency of 100MHz. It operates within a temperature range of -55°C to 150°C and has a power dissipation of 500mW. The device is supplied on a 4000-piece tape and reel, with tin, matte contact plating, and is RoHS compliant.
RoHS Compliant
Width 0.051inch
Height 0.024inch
Length 0.066inch
hFE Min 420
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SOT-563-6
Max Frequency 100MHz
Current Rating 100mA
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage 45V
Package Quantity 4000
Power Dissipation 500mW
Number of Elements 2
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 500mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 600mV

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