BC847CWT1G

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BC847CWT1G - Onsemi
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Краткое описание: NPN BJT Transistor 45V 100mA 150mW SC-70 Tape & Reel
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN bipolar junction transistor (BJT) featuring a 45V collector-emitter voltage (VCEO) and a 100mA maximum collector current. This general-purpose transistor offers a minimum DC current gain (hFE) of 270 and a transition frequency of 100MHz. It is housed in a compact 3-pin SC-70 package with matte tin plating, designed for tape and reel packaging. Operating across a temperature range of -55°C to 150°C, this RoHS compliant component has a maximum power dissipation of 150mW.
RoHS Compliant
Width 1.35mm
Height 0.9mm
Length 2.2mm
hFE Min 270
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Halogen Free Halogen Free
Package/Case SC
Max Frequency 100MHz
Current Rating 100mA
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage 45V
Package Quantity 3000
Power Dissipation 150mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 150mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 600mV

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