BC847PN-7

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BC847PN-7 - Diodes
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Краткое описание: NPN/PNP BJT Transistor, 45V VCEO, 100mA IC, 300MHz, SOT-363
Производитель Diodes
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

Surface mount bipolar junction transistor (BJT) featuring NPN and PNP polarity in a 2-element configuration. This silicon transistor offers a maximum collector current of 100mA and a collector-emitter voltage (VCEO) of 45V. With a gain bandwidth product of 300MHz, it is suitable for high-frequency applications. The ultra-small plastic package (SOT-363) measures 2.2mm x 1.35mm x 1mm, supporting a maximum power dissipation of 200mW.
RoHS Not Compliant
Mount Surface Mount
Width 1.35mm
Height 1mm
Length 2.2mm
Series BC847P
Weight 0.000212oz
hFE Min 200
Polarity NPN, PNP
Frequency 300MHz
Packaging Tape and Reel
Package/Case SOT-363
RoHS Compliant No
Package Quantity 3000
Power Dissipation 200mW
Number of Elements 2
Max Collector Current 100mA
Max Power Dissipation 200mW
Gain Bandwidth Product 300MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 45V
Collector Emitter Voltage (VCEO) 45V

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