BC848AE6327HTSA1
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NPN BJT Transistor, 30V VCEO, 100mA IC, 250MHz, SOT-23, SMD
Дополнительная информация
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 30V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 100mA. Operates with a transition frequency of 250MHz and a maximum power dissipation of 330mW. Packaged in a SOT-23 surface mount case, this RoHS compliant component offers a wide operating temperature range from -65°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 0.9mm |
| Length | 2.9mm |
| Polarity | NPN |
| Frequency | 250MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 250MHz |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 30V |
| Package Quantity | 3000 |
| Power Dissipation | 330mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 330mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 6V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 600mV |
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