BC848B-7-F
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Краткое описание:
NPN BJT Transistor, 30V, 100mA, 300MHz, SOT-23, SM
Дополнительная информация
NPN bipolar junction transistor (BJT) for small signal applications. Features a 30V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 300MHz. Packaged in a SOT-23 surface-mount plastic package, this silicon transistor operates from -65°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| hFE Min | 200 |
| Polarity | NPN |
| Frequency | 300MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 300MHz |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Power Dissipation | 350mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 300MHz |
| Max Collector Current | 100mA |
| Max Power Dissipation | 300mW |
| Gain Bandwidth Product | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 600mV |
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