BC848BWT106
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NPN BJT Transistor, 30V, 100mA, 200MHz, SOT-23-3
Дополнительная информация
NPN silicon bipolar junction transistor for small signal applications. Features a 30V collector-emitter breakdown voltage and 100mA continuous collector current. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 200MHz. Packaged in a compact UMT3 (SC-70) surface-mount package with 3 pins. Operates across a wide temperature range from -65°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 200 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 100mA |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 600mV |
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