BC848CDW1T1G

Производится
BC848CDW1T1G - Onsemi
Увеличить
Краткое описание: Dual NPN BJT, 30V, 100mA, 100MHz, SOT-363-6
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Dual NPN Bipolar Transistor in a SOT-363-6 package, offering a 30V collector-emitter voltage (VCEO) and a maximum collector current of 100mA. Features a high DC current gain (hFE) of 420 and a transition frequency of 100MHz. This RoHS compliant component operates within a temperature range of -55°C to 150°C and has a power dissipation of 380mW. Supplied on a 3000-piece tape and reel.
RoHS Compliant
Width 1.35mm
Height 1.1mm
Length 2.2mm
hFE Min 420
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-363-6
Max Frequency 100MHz
Current Rating 100mA
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage 30V
Package Quantity 3000
Power Dissipation 380mW
Number of Elements 2
Radiation Hardening No
Transition Frequency 100MHz
Max Breakdown Voltage 30V
Max Collector Current 100mA
Max Power Dissipation 380mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 30V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 30V
Collector Emitter Breakdown Voltage 30V
Collector Emitter Saturation Voltage 600mV

Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.