BC848CPDW1T1G
Производится
Увеличить
Краткое описание:
NPN/PNP BJT Transistor, 30V, 100mA, 100MHz, SOT-363-6
Дополнительная информация
NPN/PNP Bipolar Junction Transistor in a compact SOT-363-6 package. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 270 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 380mW. Supplied on a 3000-piece tape and reel.
| RoHS | Compliant |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| hFE Min | 270 |
| Polarity | NPN, PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-363-6 |
| Max Frequency | 100MHz |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 30V |
| Package Quantity | 3000 |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 380mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 600mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
