BC849BLT1G
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Краткое описание:
NPN BJT 30V 100mA 100MHz SOT-23 Transistor
Дополнительная информация
NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 30V Collector-Emitter Voltage (VCEO) and a 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 200 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with a 300mW power dissipation. Packaged on a 3000-piece tape and reel.
| RoHS | Compliant |
| Width | 1.3mm |
| Height | 0.94mm |
| Length | 2.9mm |
| hFE Min | 200 |
| Polarity | NPN |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Max Frequency | 100MHz |
| Current Rating | 100mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | 30V |
| Package Quantity | 3000 |
| Power Dissipation | 300mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 300mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 600mV |
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