BC850CLT1G

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BC850CLT1G - Onsemi
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Краткое описание: NPN BJT Transistor, 45V VCEO, 100mA IC, 100MHz, SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Bipolar Junction Transistor in a SOT-23-3 package. Features a 45V Collector-Emitter Voltage (VCEO) and 100mA maximum collector current. Offers a minimum DC current gain (hFE) of 420 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. Packaged on a 3000-piece tape and reel.
RoHS Compliant
Width 1.3mm
Height 0.94mm
Length 2.9mm
hFE Min 420
Polarity NPN
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Max Frequency 100MHz
Current Rating 100mA
RoHS Compliant Yes
Contact Plating Tin, Matte
DC Rated Voltage 45V
Package Quantity 1
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 225mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 600mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 600mV

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