BC856AW-7-F
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PNP BJT Transistor, 65V VCEO, 100mA IC, 200MHz, SOT-323
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 65V Collector-Emitter Breakdown Voltage (VCEO) and 100mA Max Collector Current (IC). Operates with a 200MHz Gain Bandwidth Product and 200mW Power Dissipation. Packaged in a 3-pin plastic SOT-323 surface mount package, this component is lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| hFE Min | 125 |
| Polarity | PNP |
| Frequency | 200MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-323 |
| Max Frequency | 200MHz |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Number of Elements | 1 |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 650mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | 650mV |
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