BC856BDW1T1G
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Dual PNP BJT, 65V, 100mA, 100MHz, SOT-363-6
Дополнительная информация
Dual PNP Bipolar Junction Transistor (BJT) in a SOT-363-6 package. Features a 65V Collector-Emitter Voltage (VCEO) and 80V Collector-Base Voltage (VCBO). Offers a maximum collector current of 100mA and a transition frequency of 100MHz. This RoHS compliant component operates from -55°C to 150°C with a power dissipation of 380mW. Supplied on a 3000-piece tape and reel.
| RoHS | Compliant |
| Width | 1.25mm |
| Height | 0.9mm |
| Length | 2mm |
| hFE Min | 220 |
| Polarity | PNP |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-363-6 |
| Max Frequency | 100MHz |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -65V |
| Package Quantity | 3000 |
| Power Dissipation | 380mW |
| Number of Elements | 2 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 380mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 650mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | -650mV |
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