BC856BLT1G
Производится
Увеличить
Краткое описание:
PNP BJT Transistor 65V 100mA 300mW SOT-23
Дополнительная информация
PNP bipolar junction transistor in a SOT-23-3 package. Features a 65V collector-emitter breakdown voltage, 100mA maximum collector current, and 300mW power dissipation. Offers a minimum DC current gain (hFE) of 220 and a transition frequency of 100MHz. Operates across a temperature range of -55°C to 150°C. Packaged in tape and reel for automated assembly.
| RoHS | Compliant |
| Width | 1.3mm |
| Height | 0.94mm |
| Length | 2.9mm |
| hFE Min | 220 |
| Polarity | PNP |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Max Frequency | 100MHz |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | -65V |
| Package Quantity | 3000 |
| Power Dissipation | 300mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 300mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 650mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | -650mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
