BC856BW-7-F
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PNP BJT Transistor, 65V VCEO, 100mA IC, 200MHz, SOT-323
Дополнительная информация
PNP silicon bipolar junction transistor for surface mount applications. Features a 65V collector-emitter breakdown voltage and 100mA maximum collector current. Offers a 200MHz gain bandwidth product and 200mW power dissipation. Housed in a compact SOT-323 plastic package with tin, matte contact plating. Operates across a wide temperature range of -65°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.35mm |
| Height | 1mm |
| Length | 2.2mm |
| Weight | 0.000212oz |
| Polarity | PNP |
| Frequency | 200MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-323 |
| Max Frequency | 200MHz |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | -65V |
| Package Quantity | 3000 |
| Power Dissipation | 200mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 650mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | -650mV |
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