BC856BWT1G
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Краткое описание:
PNP BJT Transistor 65V 100mA 150mW SC-70
Дополнительная информация
PNP Bipolar Junction Transistor (BJT) with a 65V Collector-Emitter Voltage (VCEO) and a maximum collector current of 100mA. Features a minimum DC current gain (hFE) of 150 and a transition frequency of 100MHz. Housed in a compact 3-pin SC-70 package, this component offers a power dissipation of 150mW and operates across a temperature range of -55°C to 150°C. Supplied on tape and reel for automated assembly.
| RoHS | Compliant |
| Width | 1.35mm |
| Height | 0.9mm |
| Length | 2.2mm |
| hFE Min | 150 |
| Polarity | PNP |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SC |
| Max Frequency | 100MHz |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -65V |
| Package Quantity | 3000 |
| Power Dissipation | 150mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 65V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 150mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | -80V |
| Collector-emitter Voltage-Max | 650mV |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Saturation Voltage | -650mV |
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