BC857BDW1T1G

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BC857BDW1T1G - Onsemi
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Краткое описание: PNP BJT Transistor 45V 100mA 380mW SOT-363-6
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) with a 45V Collector-Emitter Voltage (VCEO) and a 100mA maximum collector current. Features a 100MHz transition frequency and a minimum hFE of 220. Housed in a 6-pin SOT-363-6 package, this component offers a maximum power dissipation of 380mW and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
RoHS Compliant
Width 1.25mm
Height 0.9mm
Length 2mm
hFE Min 220
Polarity PNP
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-363-6
Max Frequency 100MHz
Current Rating -100mA
RoHS Compliant Yes
DC Rated Voltage -45V
Package Quantity 1
Power Dissipation 380mW
Number of Elements 2
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 380mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 650mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage -650mV

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