BC857BLP-7
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Краткое описание:
PNP BJT Transistor, 45V VCEO, 100mA IC, 100MHz, DFN
Дополнительная информация
PNP silicon bipolar junction transistor in an ultra-small, leadless DFN package. Features a 45V collector-emitter breakdown voltage, 100mA maximum collector current, and a 200MHz gain bandwidth product. This surface mount transistor offers a minimum hFE of 220 and operates across a wide temperature range from -55°C to 150°C. With 250mW power dissipation and gold contact plating, it is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.6mm |
| Height | 1.5mm |
| Length | 1mm |
| hFE Min | 220 |
| Polarity | PNP |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | DFN |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| Contact Plating | Gold |
| DC Rated Voltage | -50V |
| Package Quantity | 3000 |
| Power Dissipation | 250mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 250mW |
| Gain Bandwidth Product | 200MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 650mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 650mV |
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