BC857BLP4-7

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BC857BLP4-7 - Diodes
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Краткое описание: PNP BJT 45V 100mA 250mW DFN Surface Mount
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

The BC857BLP4-7 is a PNP bipolar junction transistor with a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. It features a gain bandwidth product of 100MHz and a maximum power dissipation of 250mW. The transistor is packaged in a DFN surface mount package with a maximum operating temperature range of -55°C to 150°C. It is compliant with RoHS and Reach SVHC regulations.
RoHS Compliant
Mount Surface Mount
Width 0.6mm
Height 0.35mm
Length 1mm
hFE Min 220
Polarity PNP
Packaging Tape and Reel
Package/Case DFN
RoHS Compliant Yes
Contact Plating Gold
Package Quantity 3000
Reach SVHC Compliant Yes
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 250mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 650mV
Collector Emitter Breakdown Voltage 45V

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