BC857BLT1G

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BC857BLT1G - Onsemi
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Краткое описание: PNP BJT Transistor 45V 100mA 300mW SOT-23
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 45V Collector-Emitter Voltage (VCEO) and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 220 and a transition frequency of 100MHz. Power dissipation is rated at 300mW, with operating temperatures from -55°C to 150°C. Supplied on tape and reel.
RoHS Compliant
Width 1.3mm
Height 0.94mm
Length 2.9mm
hFE Min 220
Polarity PNP
Frequency 100MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23-3
Max Frequency 100MHz
Current Rating -100mA
RoHS Compliant Yes
DC Rated Voltage -45V
Package Quantity 3000
Power Dissipation 300mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 300mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 50V
Collector-emitter Voltage-Max 650mV
Collector Emitter Voltage (VCEO) 45V
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage -650mV

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