BC857BT116
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PNP BJT Transistor, 45V VCEO, 100mA IC, 200MHz fT, SOT-23
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 45V. Operates with a transition frequency of 200MHz and a gain bandwidth product of 250MHz. Packaged in a SOT-23 surface mount case, this RoHS compliant component offers a minimum operating temperature of -65°C and a maximum of 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | BC857B |
| hFE Min | 210 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | -45V |
| Package Quantity | 1 |
| Power Dissipation | 200mW |
| Reach SVHC Compliant | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 200mW |
| Gain Bandwidth Product | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 600mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector Emitter Breakdown Voltage | 32V |
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