BC857BV-7

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BC857BV-7 - Diodes
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Краткое описание: PNP BJT Transistor, 45V, 100mA, 100MHz, SOT-563
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Bipolar Junction Transistor, 100mA max collector current, 45V collector-emitter breakdown voltage. Features a 100MHz gain bandwidth product and a low collector-emitter saturation voltage of -400mV. Housed in an ultra-small SOT-563 plastic package for surface mounting, with dimensions of 1.6mm length, 1.2mm width, and 0.6mm height. Operates across a wide temperature range from -55°C to 150°C, with tin-matte contact plating.
RoHS Compliant
Mount Surface Mount
Width 1.2mm
Height 0.6mm
Length 1.6mm
Weight 0.000106oz
Polarity PNP
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-563
RoHS Compliant Yes
Contact Plating Tin, Matte
Package Quantity 3000
Reach SVHC Compliant Yes
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Max Collector Current 100mA
Max Power Dissipation 150mW
Gain Bandwidth Product 100MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -50V
Collector-emitter Voltage-Max 400mV
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage -400mV

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