BC858ALT1G
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PNP BJT Transistor, 30V VCEO, 100mA IC, 100MHz, SOT-23
Дополнительная информация
PNP Bipolar Junction Transistor in a SOT-23-3 package. Features a Collector-Emitter Voltage (VCEO) of 30V, a maximum Collector Current of 100mA, and a Collector-Emitter Saturation Voltage of -650mV. Offers a DC Rated Voltage of -30V and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. Packaged on a 3000-piece tape and reel.
| RoHS | Compliant |
| Width | 1.4mm |
| Height | 1.01mm |
| Length | 3.04mm |
| hFE Min | 125 |
| Polarity | PNP |
| Frequency | 100MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23-3 |
| Max Frequency | 100MHz |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 1 |
| Power Dissipation | 300mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 225mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | -80V |
| Collector-emitter Voltage-Max | 650mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -650mV |
