BC858BT116
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PNP BJT Transistor, 30V, 100mA, 250MHz, TO-236-3 SMT
Дополнительная информация
PNP silicon bipolar junction transistor for small signal applications. Features a 30V collector-emitter breakdown voltage and a continuous collector current of -100mA. Offers a minimum DC current gain (hFE) of 210 and a transition frequency of 250MHz. Packaged in a TO-236-3 (SST) surface-mount configuration with copper, tin, and silver contact plating. Operates from -65°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 210 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| Contact Plating | Copper, Tin, Silver |
| DC Rated Voltage | -30V |
| Package Quantity | 1 |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 350mW |
| Gain Bandwidth Product | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | -5V |
| Continuous Collector Current | -100mA |
| Collector Base Voltage (VCBO) | -30V |
| Collector-emitter Voltage-Max | 650mV |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -650mV |
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