BC858BWH6327XTSA1
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PNP BJT Transistor, 30V VCEO, 100mA IC, 250MHz, SOT-323
Дополнительная информация
PNP Silicon Bipolar Junction Transistor, surface mountable in a SOT-323-3 package. Features a 30V collector-emitter breakdown voltage (VCEO) and a maximum collector current of 100mA. Operates with a transition frequency of 250MHz and a maximum power dissipation of 250mW. This component is ROHS compliant, halogen-free, and lead-free, with a wide operating temperature range from -65°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.25mm |
| Height | 0.8mm |
| Length | 2mm |
| Polarity | PNP |
| Frequency | 250MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Halogen Free | Halogen Free |
| Package/Case | SOT-323-3 |
| Max Frequency | 250MHz |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 3000 |
| Power Dissipation | 250mW |
| Number of Elements | 1 |
| Transition Frequency | 250MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 250mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 30V |
| Collector-emitter Voltage-Max | 650mV |
| Collector Emitter Voltage (VCEO) | 650mV |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 650mV |
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