BC858CDXV6T1G
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Краткое описание:
PNP BJT Transistor, SOT-563, 30V, 100mA, 100MHz, 420hFE
Дополнительная информация
PNP Bipolar Junction Transistor in a SOT-563-6 package. Features a maximum collector current of 100mA and a collector-emitter breakdown voltage of 30V. Offers a minimum hFE of 420 and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. Packaged on a 4000-unit tape and reel, this component is lead-free and RoHS compliant.
| RoHS | Compliant |
| Width | 1.3mm |
| Height | 0.6mm |
| Length | 1.7mm |
| hFE Min | 420 |
| Polarity | PNP |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-563-6 |
| Max Frequency | 100MHz |
| Current Rating | -100mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Package Quantity | 4000 |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 500mW |
| Gain Bandwidth Product | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | -30V |
| Collector-emitter Voltage-Max | 650mV |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -650mV |
