BCP53-10T1G
Производится
Увеличить
Краткое описание:
PNP BJT Transistor, 80V, 1.5A, 50MHz, SOT-223-4
Дополнительная информация
PNP bipolar junction transistor featuring an 80V collector-emitter breakdown voltage and a maximum collector current of 1.5A. This device offers a DC current gain (hFE) range from 63 to 160 and a transition frequency of 50MHz. Packaged in a SOT-223-4 (TO-261) surface-mount case, it operates within a temperature range of -65°C to 150°C and has a power dissipation of 1.5W. The component is RoHS compliant and supplied on a 1000-piece tape and reel.
| RoHS | Compliant |
| Width | 3.7mm |
| Height | 1.75mm |
| Length | 6.7mm |
| hFE Min | 25 |
| Polarity | PNP |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223-4 |
| Max Frequency | 50MHz |
| Current Rating | -1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -80V |
| Package Quantity | 1000 |
| Power Dissipation | 1.5W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1.5A |
| Max Power Dissipation | 1.5W |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | -80V |
| Collector Emitter Saturation Voltage | -500mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
