BCP53-16T3G
Производится
Увеличить
Краткое описание:
PNP BJT 80V 1.5A 50MHz SOT-223-4 Transistor
Дополнительная информация
PNP bipolar junction transistor featuring an 80V collector-emitter breakdown voltage and 100V collector-base voltage. This component offers a DC current gain (hFE) range of 100 to 250 and a maximum collector current of 1.5A. Operating at a transition frequency of 50MHz, it is housed in a SOT-223-4 package with tin, matte contact plating. Maximum power dissipation is 1.5W, with operating temperatures from -65°C to 150°C.
| RoHS | Compliant |
| Width | 0.146inch |
| Height | 0.065inch |
| Length | 0.263inch |
| hFE Min | 25 |
| Polarity | PNP |
| Frequency | 50MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-223-4 |
| Max Frequency | 35MHz |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| Package Quantity | 4000 |
| Power Dissipation | 1.5W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 50MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1.5A |
| Max Power Dissipation | 1.5W |
| Gain Bandwidth Product | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -500mV |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
