BCP53TA
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Краткое описание:
PNP BJT Transistor, 80V VCEO, 1A IC, 150MHz, SOT-223
Дополнительная информация
PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features 80V Collector-Emitter Breakdown Voltage (VCEO), 1A Max Collector Current (IC), and 2W Max Power Dissipation. Operates with a 150MHz Gain Bandwidth Product and 500mV Collector-Emitter Saturation Voltage. Packaged in a SOT-223 plastic case with tin matte contact plating, this component is RoHS and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.55mm |
| Height | 1.65mm |
| Length | 6.55mm |
| Weight | 0.000282oz |
| hFE Min | 40 |
| Polarity | PNP |
| Frequency | 150MHz |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Package/Case | SOT-223 |
| Max Frequency | 150MHz |
| Current Rating | -1A |
| RoHS Compliant | Yes |
| Contact Plating | Tin, Matte |
| DC Rated Voltage | -80V |
| Package Quantity | 1000 |
| Power Dissipation | 2W |
| Number of Elements | 1 |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 150MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Power Dissipation | 2W |
| Gain Bandwidth Product | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Collector Base Voltage (VCBO) | 100V |
| Collector-emitter Voltage-Max | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
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